Publication:

Effects of processing and radiation bias on leakage currents in Ge pMOSFETs

Date

2010
Journal article
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dc.contributor.authorZhang, Cher Xuan
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-19T00:56:15Z
dc.date.available2021-10-19T00:56:15Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18410
dc.source.beginpage3066
dc.source.endpage3070
dc.source.issue6
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume57
dc.title

Effects of processing and radiation bias on leakage currents in Ge pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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