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On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications
Publication:
On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications
Date
2020
Proceedings Paper
https://doi.org/10.1109/IIRW49815.2020.9312857
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lin, Chien-Yu
;
Putcha, Vamsi
;
Alian, Alireza
;
Waldron, Niamh
;
Linten, Dimitri
;
Collaert, Nadine
;
Chang, Ting-Chang
Journal
na
Abstract
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1775
since deposited on 2021-11-02
Acq. date: 2025-10-26
Citations
Metrics
Views
1775
since deposited on 2021-11-02
Acq. date: 2025-10-26
Citations