Publication:
On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications
| dc.contributor.author | Lin, Chien-Yu | |
| dc.contributor.author | Putcha, Vamsi | |
| dc.contributor.author | Alian, Alireza | |
| dc.contributor.author | Waldron, Niamh | |
| dc.contributor.author | Linten, Dimitri | |
| dc.contributor.author | Collaert, Nadine | |
| dc.contributor.author | Chang, Ting-Chang | |
| dc.contributor.imecauthor | Putcha, Vamsi | |
| dc.contributor.imecauthor | Alian, Alireza | |
| dc.contributor.imecauthor | Waldron, Niamh | |
| dc.contributor.imecauthor | Linten, Dimitri | |
| dc.contributor.imecauthor | Collaert, Nadine | |
| dc.contributor.orcidimec | Putcha, Vamsi::0000-0003-1907-5486 | |
| dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
| dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
| dc.date.accessioned | 2022-01-19T11:40:06Z | |
| dc.date.available | 2021-11-02T16:01:03Z | |
| dc.date.available | 2022-01-19T11:40:06Z | |
| dc.date.issued | 2020 | |
| dc.identifier.doi | 10.1109/IIRW49815.2020.9312857 | |
| dc.identifier.eisbn | 978-1-7281-7058-9 | |
| dc.identifier.issn | 1930-8841 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37871 | |
| dc.publisher | IEEE | |
| dc.source.beginpage | 24 | |
| dc.source.conference | IEEE International Integrated Reliability Workshop (IIRW) | |
| dc.source.conferencedate | OCT 04-NOV 01, 2020 | |
| dc.source.conferencelocation | South Lake Tahoe, CA, USA | |
| dc.source.endpage | 30 | |
| dc.source.journal | na | |
| dc.source.numberofpages | 7 | |
| dc.subject.keywords | CURRENT COLLAPSE | |
| dc.title | On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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