Time dependent dielectric breakdown and stress induced leakage current characteristics of 0.7nm EOT HfO2 pFETs

dc.contributor.author	O'Connor, Robert
dc.contributor.author	Hughes, Greg
dc.contributor.author	Kauerauf, Thomas
dc.date.accessioned	2021-10-19T16:48:46Z
dc.date.available	2021-10-19T16:48:46Z
dc.date.embargo	9999-12-31
dc.date.issued	2011
dc.identifier.issn	1530-4388
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/19498
dc.source.beginpage	290
dc.source.endpage	294
dc.source.issue	2
dc.source.journal	IEEE Transactions on Device and Materials Reliability
dc.source.volume	11
dc.title	Time dependent dielectric breakdown and stress induced leakage current characteristics of 0.7nm EOT HfO2 pFETs
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 22649.pdf Size: 629.77 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date