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A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
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A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Yangyin
;
Yu, Shimeng
;
Guan, Ximeng
;
Wong, H.S.Philip
;
Kittl, Jorge
Journal
Applied Physics Letters
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2005
since deposited on 2021-10-20
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last month
1
last week
Acq. date: 2026-01-25
Citations