A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

dc.contributor.author	Chen, Yangyin
dc.contributor.author	Yu, Shimeng
dc.contributor.author	Guan, Ximeng
dc.contributor.author	Wong, H.S.Philip
dc.contributor.author	Kittl, Jorge
dc.contributor.imecauthor	Chen, Yangyin
dc.date.accessioned	2021-10-20T10:15:47Z
dc.date.available	2021-10-20T10:15:47Z
dc.date.embargo	9999-12-31
dc.date.issued	2012
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20448
dc.source.beginpage	43507
dc.source.issue	4
dc.source.journal	Applied Physics Letters
dc.source.volume	100
dc.title	A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
dc.type	Journal article
dspace.entity.type	Publication
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