Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

dc.contributor.author	Vais, Abhitosh
dc.contributor.author	Franco, Jacopo
dc.contributor.author	Lin, Dennis
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Mocuta, Anda
dc.contributor.author	De Meyer, Kristin
dc.contributor.author	Thean, Aaron
dc.contributor.imecauthor	Vais, Abhitosh
dc.contributor.imecauthor	Franco, Jacopo
dc.contributor.imecauthor	Lin, Dennis
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.imecauthor	Thean, Aaron
dc.contributor.orcidimec	Vais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimec	Franco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.date.accessioned	2021-10-22T23:48:47Z
dc.date.available	2021-10-22T23:48:47Z
dc.date.embargo	9999-12-31
dc.date.issued	2015
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/26026
dc.identifier.url	http://scitation.aip.org/content/aip/journal/apl/107/22/10.1063/1.4936991
dc.source.beginpage	223504
dc.source.issue	22
dc.source.journal	Applied Physics Letters
dc.source.volume	107
dc.title	Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks
dc.type	Journal article
dspace.entity.type	Publication
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