Modeling Carrier In- and Ejection for Charge Trap Flash Memory: Insights from Engineered SON(ON)OS Vehicles

Despite charge trap flash memories being commercialized, the detailed understanding of the underlying physics remains limited. Here, we therefore evaluate common assumptions for the in- and ejection of charge carriers in the trapping layer, by comparing to measurements of both standard SONOS and engineered SONONOS devices. We find a strong impact of these assumptions on the peak of the trapped charge profile as well as on the accumulation near the blocking oxide. Finally, we highlight the need for a non-local detrapping model.