Modeling Carrier In- and Ejection for Charge Trap Flash Memory: Insights from Engineered SON(ON)OS Vehicles

Abstract

Despite charge trap flash memories being commercialized, the detailed understanding of the underlying physics remains limited. Here, we therefore evaluate common assumptions for the in- and ejection of charge carriers in the trapping layer, by comparing to measurements of both standard SONOS and engineered SONONOS devices. We find a strong impact of these assumptions on the peak of the trapped charge profile as well as on the accumulation near the blocking oxide. Finally, we highlight the need for a non-local detrapping model.