Publication:

HfONx high-k layers deposited by MOCVD in mixed gas flows of N2O and O2

Date

2003
Meeting abstract
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dc.contributor.authorZhao, Chao
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorConard, Thierry
dc.contributor.authorXu, Zhen
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-15T07:59:50Z
dc.date.available2021-10-15T07:59:50Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8441
dc.source.conference204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials
dc.source.conferencedate13/10/2003
dc.source.conferencelocationOrlando, FL USA
dc.title

HfONx high-k layers deposited by MOCVD in mixed gas flows of N2O and O2

dc.typeMeeting abstract
dspace.entity.typePublication
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