Chemical vapour deposition of Si:C and Si:C:P films – evaluation of material quality as a function of C content, carrier gas and doping

dc.contributor.author	Dhayalan, Sathish Kumar
dc.contributor.author	Loo, Roger
dc.contributor.author	Hikavyy, Andriy
dc.contributor.author	Rosseel, Erik
dc.contributor.author	Bender, Hugo
dc.contributor.author	Richard, Olivier
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Loo, Roger
dc.contributor.imecauthor	Hikavyy, Andriy
dc.contributor.imecauthor	Rosseel, Erik
dc.contributor.imecauthor	Bender, Hugo
dc.contributor.imecauthor	Richard, Olivier
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.contributor.orcidimec	Hikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimec	Richard, Olivier::0000-0002-3994-8021
dc.date.accessioned	2021-10-22T19:02:55Z
dc.date.available	2021-10-22T19:02:55Z
dc.date.issued	2015
dc.identifier.issn	0022-0248
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/25210
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0022024815003826
dc.source.beginpage	75
dc.source.endpage	81
dc.source.journal	Journal of Crystal Growth
dc.source.volume	426
dc.title	Chemical vapour deposition of Si:C and Si:C:P films – evaluation of material quality as a function of C content, carrier gas and doping
dc.type	Journal article
dspace.entity.type	Publication
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