Achieving 1ppm write-error rate in SOT-MRAM with synthetic antiferromagnetic free layer

Abstract

We demonstrate the functionality of a perpendicular spin-orbit torque (SOT)-MRAM with a synthetic anti ferromagnetic (SAF) free layer in the magnetic tunnel junction (MTJ) pillar. This novel stack design significantly reduces the write error rate (WER) to as low as 10‒6 while maintaining a thermal budget of 400°C, ensuring BEOL compatibility. Our micromagnetic simulations systematically guide the selection of key material parameters, ensuring reliable operation in real device demonstration. This correlation between simulation-guided material selection and experimental validation is crucial for advancing SOT-MRAM technology. Finally, our devices are fabricated on 300 mm wafers, enabling significant strides in technological integration.