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Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine

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dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorLoo, Roger
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNuytten, Thomas
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-22T01:17:16Z
dc.date.available2021-10-22T01:17:16Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23765
dc.identifier.urlhttps://ecs.confex.com/ecs/226/webprogram/Paper40652.html
dc.source.beginpage1858
dc.source.conference226th Fall Meeting of the Electrochemical Society
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.title

Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine

dc.typeMeeting abstract
dspace.entity.typePublication
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