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AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
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AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
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Date
2013
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zanoni, Enrico
;
Meneghini, Matteo
;
Chini, Alessandro
;
Marcon, Denis
;
Meneghesso, Gaudenzio
Journal
IEEE Transactions on Electron Devices
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1859
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Acq. date: 2025-12-11
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Views
1859
since deposited on 2021-10-21
1
last month
Acq. date: 2025-12-11
Citations