AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction

dc.contributor.author	Zanoni, Enrico
dc.contributor.author	Meneghini, Matteo
dc.contributor.author	Chini, Alessandro
dc.contributor.author	Marcon, Denis
dc.contributor.author	Meneghesso, Gaudenzio
dc.contributor.imecauthor	Marcon, Denis
dc.date.accessioned	2021-10-21T14:59:09Z
dc.date.available	2021-10-21T14:59:09Z
dc.date.embargo	9999-12-31
dc.date.issued	2013
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/23434
dc.identifier.url	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6564457
dc.source.beginpage	3119
dc.source.endpage	3131
dc.source.issue	10
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	60
dc.title	AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 27590.pdf Size: 2.08 MB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date