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Electromigration and stress-induced-voiding in dual damascene Cu/low-k interconnects: a complex balance between vacancy and stress gradients

Date

2010
Proceedings Paper
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dc.contributor.authorCroes, Kristof
dc.contributor.authorWilson, Chris
dc.contributor.authorLofrano, Melina
dc.contributor.authorVereecke, Bart
dc.contributor.authorBeyer, Gerald
dc.contributor.authorTokei, Zsolt
dc.contributor.imecauthorCroes, Kristof
dc.contributor.imecauthorWilson, Chris
dc.contributor.imecauthorLofrano, Melina
dc.contributor.imecauthorVereecke, Bart
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.date.accessioned2021-10-18T15:43:51Z
dc.date.available2021-10-18T15:43:51Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16920
dc.source.beginpage591
dc.source.conference48th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/05/2010
dc.source.conferencelocationAnaheim, CA USA
dc.source.endpage598
dc.title

Electromigration and stress-induced-voiding in dual damascene Cu/low-k interconnects: a complex balance between vacancy and stress gradients

dc.typeProceedings paper
dspace.entity.typePublication
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