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Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography
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Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography
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Date
1996
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kissinger, G.
;
Vanhellemont, Jan
;
Simoen, Eddy
;
Claeys, Cor
;
Richter, H.
Journal
Materials Science and Engineering B
Abstract
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2052
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Acq. date: 2026-07-28
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Statistics
Views
2052
since deposited on 2021-09-29
2
last month
Acq. date: 2026-07-28
Citations