PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms

Publication:

2018

Journal article

Author(s)

;

;

;

;

;

;

;

IEEE Transactions on Electron Devices

2060 since deposited on 2021-10-26

3last month

2last week

Acq. date: 2026-04-27