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PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms

Date

2018
Journal article
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dc.contributor.authorTallarico, Andrea
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorMagnone, Paolo
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSangiorgi, Enrico
dc.contributor.authorFiegna, Claudio
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-26T05:16:17Z
dc.date.available2021-10-26T05:16:17Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31910
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8114336/
dc.source.beginpage38
dc.source.endpage44
dc.source.issue1
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume65
dc.title

PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms

dc.typeJournal article
dspace.entity.typePublication
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