Publication:

Improved resistivity of NiAl thin films at low temperature for advanced interconnect metallization

Date

2022-06
Proceedings Paper
https://doi.org/10.1109/IITC52079.2022.9881310
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dc.contributor.authorSoulie, Jean-Philippe
dc.contributor.authorTokei, Zsolt
dc.contributor.authorSwerts, Johan
dc.contributor.authorAdelmann, Christoph
dc.contributor.imecauthorSoulie, Jean-Philippe
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.orcidimecSoulie, Jean-Philippe::0000-0002-5956-6485
dc.contributor.orcidimecTokei, Zsolt::0000-0003-3545-3424
dc.contributor.orcidimecSwerts, Johan::0000-0001-7547-7194
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.accessioned2024-04-09T07:13:18Z
dc.date.available2023-04-04T15:28:33Z
dc.date.available2024-04-09T07:13:18Z
dc.date.embargo9999-12-31
dc.date.issued2022-06
dc.identifier.doi10.1109/IITC52079.2022.9881310
dc.identifier.issn2380-6338
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41426
dc.publisherIEEE
dc.source.beginpage73
dc.source.conference2022 IEEE International Interconnect Technology Conference (IITC)
dc.source.conferencedateJune 2022
dc.source.conferencelocationUSA
dc.source.endpage75
dc.source.journalN/A
dc.source.numberofpages3
dc.subject.keywordsMetallization , Conductivity , Physical vapor deposition , Germanium , Silicon , Epitaxial growth
dc.title

Improved resistivity of NiAl thin films at low temperature for advanced interconnect metallization

dc.typeProceedings paper
dspace.entity.typePublication
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