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CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
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CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
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Date
2005-12
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lauwers, Anne
;
Veloso, Anabela
;
Hoffmann, Thomas Y.
;
Van Dal, Mark
;
Vrancken, Christa
;
Brus, Stephan
;
Locorotondo, Sabrina
;
de Marneffe, Jean-Francois
;
Sijmus, Bram
;
Kubicek, Stefan
;
Chiarella, Thomas
;
Kmieciak, Malgorzata
;
Opsomer, Karl
;
Niwa, Masaaki
;
Mitsuhashi, Riichirou
;
Kottantharayil, Anil
;
Yu, HongYu
;
Demeurisse, Caroline
;
Verbeeck, Rita
;
de Potter de ten Broeck, Muriel
;
Absil, Philippe
;
Maex, Karen
;
Jurczak, Gosia
;
Biesemans, Serge
;
Kittl, Jorge
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1957
since deposited on 2021-10-16
Acq. date: 2026-01-08
Citations
Metrics
Views
1957
since deposited on 2021-10-16
Acq. date: 2026-01-08
Citations