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CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON

Date

2005-12
Proceedings Paper
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dc.contributor.authorLauwers, Anne
dc.contributor.authorVeloso, Anabela
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorVan Dal, Mark
dc.contributor.authorVrancken, Christa
dc.contributor.authorBrus, Stephan
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorSijmus, Bram
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorOpsomer, Karl
dc.contributor.authorNiwa, Masaaki
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorYu, HongYu
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.date.accessioned2021-10-16T02:48:16Z
dc.date.available2021-10-16T02:48:16Z
dc.date.issued2005-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10755
dc.source.beginpage661
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2005
dc.source.conferencelocationWashington, DC USA
dc.source.endpage664
dc.title

CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON

dc.typeProceedings paper
dspace.entity.typePublication
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