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Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
Publication:
Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
Date
2002
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Satta, Alessandra
;
Schuhmacher, Jörg
;
Whelan, Caroline
;
Vandervorst, Wilfried
;
Brongersma, Sywert
;
Beyer, Gerald
;
Maex, Karen
;
Vantomme, Andre
;
Viitanen, M.M.
;
Brongersma, H.H.
;
Besling, Wim
Journal
Journal of Applied Physics
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1992
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1992
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations