Publication:

Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

Date

2002
Journal article
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dc.contributor.authorSatta, Alessandra
dc.contributor.authorSchuhmacher, Jörg
dc.contributor.authorWhelan, Caroline
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrongersma, Sywert
dc.contributor.authorBeyer, Gerald
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorViitanen, M.M.
dc.contributor.authorBrongersma, H.H.
dc.contributor.authorBesling, Wim
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorBrongersma, Sywert
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecBrongersma, Sywert::0000-0002-1755-3897
dc.date.accessioned2021-10-14T23:02:52Z
dc.date.available2021-10-14T23:02:52Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6792
dc.source.beginpage7641
dc.source.endpage7646
dc.source.issue12
dc.source.journalJournal of Applied Physics
dc.source.volume92
dc.title

Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

dc.typeJournal article
dspace.entity.typePublication
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