Publication:

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers

Date

2024
Journal article
https://doi.org/10.1109/TNS.2023.3346825
Simple item page Full metadata Statistics
 
dc.contributor.authorGuo, Zixiang
dc.contributor.authorZhang, En Xia
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorLinten, Dimitri
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorReed, Robert A.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.date.accessioned2024-11-19T08:19:08Z
dc.date.available2024-06-23T17:35:16Z
dc.date.available2024-11-19T08:19:08Z
dc.date.issued2024
dc.description.wosFundingTextNo Statement Available
dc.identifier.doi10.1109/TNS.2023.3346825
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44080
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage461
dc.source.endpage468
dc.source.issue4
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages8
dc.source.volume71
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsINGAAS FINFETS
dc.subject.keywordsRADIATION RESPONSE
dc.subject.keywordsOXIDE
dc.subject.keywordsBIAS
dc.subject.keywordsDEGRADATION
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsINTERFACE
dc.subject.keywordsMOSFETS
dc.title

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles