Publication:

Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks

Date

2001
Presentation
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dc.contributor.authorZhao, Chao
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorHoussa, Michel
dc.contributor.authorCarter, Richard
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorYoung, Edward
dc.contributor.authorTsai, Wilman
dc.contributor.authorRoebben, G.
dc.contributor.authorVan der Biest, O.
dc.contributor.authorHaukka, S.
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-14T18:32:33Z
dc.date.available2021-10-14T18:32:33Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5876
dc.source.conferenceSymposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
dc.title

Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks

dc.typeOral presentation
dspace.entity.typePublication
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