Publication:

Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers

Date

2021
Proceedings Paper
https://doi.org/10.1149/10404.0167ecst
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dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorAyyad, Mustafa
dc.contributor.authorMorris, Richard
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorLoo, Roger
dc.contributor.authorVantomme, André
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorAyyad, Mustafa
dc.contributor.imecauthorMorris, Richard
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2022-05-02T10:13:13Z
dc.date.available2021-12-06T14:19:54Z
dc.date.available2022-05-02T10:13:13Z
dc.date.issued2021
dc.identifier.doi10.1149/10404.0167ecst
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38571
dc.source.beginpage167
dc.source.conference240th ECS Meeting
dc.source.conferencedate2021/10/10 - 2021/10/14
dc.source.conferencelocationVirtual
dc.source.journalECS Transactions
dc.source.numberofpages14
dc.title

Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers

dc.typeProceedings paper
dspace.entity.typePublication
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