Publication:

On ESD gate dielectric reliability in 14nm finFET and horizontal NW technology

Date

2018
Proceedings Paper
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dc.contributor.authorHellings, Geert
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorScholz, Mirko
dc.contributor.authorSimicic, Marko
dc.contributor.authorSchram, Tom
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-25T19:40:30Z
dc.date.available2021-10-25T19:40:30Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30869
dc.source.beginpageB.6
dc.source.conferenceInternational Electrostatic Discharge Workshop - IEW
dc.source.conferencedate14/05/2018
dc.source.conferencelocationOud-Turnhout Belgium
dc.title

On ESD gate dielectric reliability in 14nm finFET and horizontal NW technology

dc.typeProceedings paper
dspace.entity.typePublication
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