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The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

Date

2008
Proceedings Paper
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dc.contributor.authorBeer, C.S.
dc.contributor.authorWhall, T.E.
dc.contributor.authorParker, E.H.C.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorNicholas, Gareth
dc.contributor.authorZimmerman, Paul
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T06:16:20Z
dc.date.available2021-10-17T06:16:20Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13361
dc.source.beginpage19
dc.source.conference9th International Conference on Ultimate Integration of Silicon - ULIS
dc.source.conferencedate12/03/2008
dc.source.conferencelocationUdine Italy
dc.source.endpage22
dc.title

The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

dc.typeProceedings paper
dspace.entity.typePublication
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