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Selective wet removal of Hf-based layers and post-dry etch residues high-k and metal gate

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dc.contributor.authorClaes, Martine
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBeckx, Stephan
dc.contributor.authorDemand, Marc
dc.contributor.authorDeweerd, Wim
dc.contributor.authorGaraud, Sylvain
dc.contributor.authorKraus, Harald
dc.contributor.authorVos, Rita
dc.contributor.authorSnow, Jim
dc.contributor.authorBoullart, Werner
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-15T12:52:51Z
dc.date.available2021-10-15T12:52:51Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8688
dc.source.conference7th International Symposium on Ultra Clean Processing of Silicon Surfacess - UCPSS
dc.source.conferencedate20/09/2004
dc.source.conferencelocationBrussel Belgium
dc.title

Selective wet removal of Hf-based layers and post-dry etch residues high-k and metal gate

dc.typeOral presentation
dspace.entity.typePublication
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