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Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study
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Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study
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Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lenka, Hara
;
Meersschaut, Johan
;
Kandaswamy, Prem Kumar
;
Modarresi, H.
;
Bender, Hugo
;
Vantomme, Andre
;
Vandervorst, Wilfried
Journal
Nuclear Instruments and Methods in Physics Research B
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1935
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Acq. date: 2025-12-09
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Views
1935
since deposited on 2021-10-22
3
last month
1
last week
Acq. date: 2025-12-09
Citations