Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study

dc.contributor.author	Lenka, Hara
dc.contributor.author	Meersschaut, Johan
dc.contributor.author	Kandaswamy, Prem Kumar
dc.contributor.author	Modarresi, H.
dc.contributor.author	Bender, Hugo
dc.contributor.author	Vantomme, Andre
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Meersschaut, Johan
dc.contributor.imecauthor	Bender, Hugo
dc.contributor.imecauthor	Vantomme, Andre
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.orcidimec	Meersschaut, Johan::0000-0003-2467-1784
dc.date.accessioned	2021-10-22T02:54:24Z
dc.date.available	2021-10-22T02:54:24Z
dc.date.issued	2014
dc.identifier.issn	0168-583X
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24111
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0168583X14002687
dc.source.beginpage	69
dc.source.endpage	73
dc.source.journal	Nuclear Instruments and Methods in Physics Research B
dc.source.volume	331
dc.title	Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study
dc.type	Journal article
dspace.entity.type	Publication
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