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Metal oxide semiconductor devices studies of molecula- beam-deposited Al2O3/InP heterostructures with various surface orientations (001), (110), and (111)
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Metal oxide semiconductor devices studies of molecula- beam-deposited Al2O3/InP heterostructures with various surface orientations (001), (110), and (111)
Date
2012
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chu, Eric
;
Merckling, Clement
;
Dekoster, Johan
;
Kwo, R.
;
Hong, M.
;
Caymax, Matty
;
Heyns, Marc
Journal
Applied Physics Express
Abstract
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1860
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Citations
Metrics
Views
1860
since deposited on 2021-10-20
440
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations