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Metal oxide semiconductor devices studies of molecula- beam-deposited Al2O3/InP heterostructures with various surface orientations (001), (110), and (111)
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Metal oxide semiconductor devices studies of molecula- beam-deposited Al2O3/InP heterostructures with various surface orientations (001), (110), and (111)
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chu, Eric
;
Merckling, Clement
;
Dekoster, Johan
;
Kwo, R.
;
Hong, M.
;
Caymax, Matty
;
Heyns, Marc
Journal
Applied Physics Express
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1862
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Acq. date: 2025-12-12
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Metrics
Views
1862
since deposited on 2021-10-20
1
last month
Acq. date: 2025-12-12
Citations