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A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
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A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
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Date
1998
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Decoutere, Stefaan
;
Claeys, Cor
;
Deferm, Ludo
Journal
Solid-State Electronics
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1921
since deposited on 2021-10-01
2
last month
Acq. date: 2026-01-07
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Metrics
Views
1921
since deposited on 2021-10-01
2
last month
Acq. date: 2026-01-07
Citations