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A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
Publication:
A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
Date
1998
Journal article
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2511.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Decoutere, Stefaan
;
Claeys, Cor
;
Deferm, Ludo
Journal
Solid-State Electronics
Abstract
Description
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1917
since deposited on 2021-10-01
Acq. date: 2025-10-23
Citations
Metrics
Views
1917
since deposited on 2021-10-01
Acq. date: 2025-10-23
Citations