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A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Date

1998
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorClaeys, Cor
dc.contributor.authorDeferm, Ludo
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-01T08:56:18Z
dc.date.available2021-10-01T08:56:18Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2950
dc.source.beginpage1679
dc.source.endpage1687
dc.source.issue9
dc.source.journalSolid-State Electronics
dc.source.volume42
dc.title

A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

dc.typeJournal article
dspace.entity.typePublication
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