Publication:

Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET

Date

2022
Journal article
https://doi.org/10.1109/LED.2022.3185025
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dc.contributor.authorSaurabh, Nishant
dc.contributor.authorPatil, Shubham
dc.contributor.authorRawat, Amita
dc.contributor.authorChiarella, Thomas
dc.contributor.authorParvais, Bertrand
dc.contributor.authorGanguly, Udayan
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.accessioned2023-04-06T12:22:19Z
dc.date.available2022-08-28T02:37:01Z
dc.date.available2023-04-06T12:22:19Z
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by the Department of Science and Technology (DST) Nano Mission, India; in part by the Ministry of Electronics and IT (MeitY) and Department of Electronics through the Nanoelectronics Network for Research and Applications (NNETRA) Project; in part by the Indian Institute of Technology (IIT) Bombay Nano-Fabrication (IITBNF) Facility, IIT Bombay; and in part by the Center for Excellence (CEN), IIT Bombay. The review of this letter was arranged by Editor K. J. Kuhn.
dc.identifier.doi10.1109/LED.2022.3185025
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40314
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1171
dc.source.endpage1174
dc.source.issue8
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.numberofpages4
dc.source.volume43
dc.subject.keywordsNM
dc.title

Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET

dc.typeJournal article
dspace.entity.typePublication
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