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Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies
Publication:
Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies
Date
2014-09
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Huynh Bao, Trong
;
Yakimets, Dmitry
;
Ryckaert, Julien
;
Ciofi, Ivan
;
Baert, Rogier
;
Veloso, Anabela
;
Boemmels, Juergen
;
Collaert, Nadine
;
Roussel, Philippe
;
Demuynck, Steven
;
Raghavan, Praveen
;
Mercha, Abdelkarim
;
Tokei, Zsolt
;
Verkest, Diederik
;
Thean, Aaron
;
Wambacq, Piet
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1933
since deposited on 2021-10-22
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Acq. date: 2025-12-08
Citations
Metrics
Views
1933
since deposited on 2021-10-22
3
last month
2
last week
Acq. date: 2025-12-08
Citations