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Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures

Date

2009
Journal article
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dc.contributor.authorCrupi, F.
dc.contributor.authorGiusi, G.
dc.contributor.authorIannacone, G.
dc.contributor.authorMagnone, P.
dc.contributor.authorPace, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T21:42:22Z
dc.date.available2021-10-17T21:42:22Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15144
dc.source.beginpage73710
dc.source.issue7
dc.source.journalJournal of Applied Physics
dc.source.volume106
dc.title

Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures

dc.typeJournal article
dspace.entity.typePublication
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