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Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation

Date

2011
Proceedings Paper
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dc.contributor.authorVermang, Bart
dc.contributor.authorLorenz, Anne
dc.contributor.authorRothschild, Aude
dc.contributor.authorJohn, Joachim
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.contributor.imecauthorVermang, Bart
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecVermang, Bart::0000-0003-2669-2087
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-19T21:09:49Z
dc.date.available2021-10-19T21:09:49Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20074
dc.source.conference37th IEEE Photovoltaic Specialists Conference - PVSC
dc.source.conferencedate19/06/2011
dc.source.conferencelocationHamburg Germany
dc.title

Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation

dc.typeProceedings paper
dspace.entity.typePublication
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