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Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence
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Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence
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Date
2023
Journal article
https://doi.org/10.1117/1.JMM.22.3.034001
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1.62 MB
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bogdanowicz, Janusz
;
Oniki, Yusuke
;
Kenis, Karine
;
Puttarame Gowda, Pallavi
;
Mertens, Hans
;
Shamieh, Basel
;
Leon, Yonatan
;
Wormington, Matthew
;
Van der Meer, Juliette
;
Charley, Anne-Laure
Journal
JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3
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277
since deposited on 2023-12-15
18
last month
2
last week
Acq. date: 2025-12-12
Views
893
since deposited on 2023-12-15
1
last month
Acq. date: 2025-12-12
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