Publication:

Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence

Date

2023
Journal article
https://doi.org/10.1117/1.JMM.22.3.034001
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dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorOniki, Yusuke
dc.contributor.authorKenis, Karine
dc.contributor.authorPuttarame Gowda, Pallavi
dc.contributor.authorMertens, Hans
dc.contributor.authorShamieh, Basel
dc.contributor.authorLeon, Yonatan
dc.contributor.authorWormington, Matthew
dc.contributor.authorVan der Meer, Juliette
dc.contributor.authorCharley, Anne-Laure
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorCharley, Anne-Laure
dc.contributor.imecauthorPuttarame Gowda, Pallavi
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.contributor.orcidimecKenis, Karine::0000-0001-7116-7498
dc.contributor.orcidimecMertens, Hans::0000-0002-3392-6892
dc.contributor.orcidimecCharley, Anne-Laure::0000-0003-4745-0167
dc.contributor.orcidimecPuttarame Gowda, Pallavi::0009-0005-2886-5895
dc.date.accessioned2024-02-27T08:32:39Z
dc.date.available2023-12-15T17:16:56Z
dc.date.available2024-02-27T08:32:39Z
dc.date.embargo2023-08-02
dc.date.issued2023
dc.description.wosFundingTextThe authors would like to thank S. Schoofs (imec) for the Scanning Electron Microscopy measurements as well as the MCASA team (imec) for the TEM measurements. This project has received funding from the ECSEL Joint Undertaking (JU) (Grant No. 875999). The JU receives support from the European Union's Horizon 2020 research and innovation programme and Netherlands, Belgium, Germany, France, Austria, Hungary, United Kingdom, Romania, and Israel
dc.identifier.doi10.1117/1.JMM.22.3.034001
dc.identifier.issn1932-5150
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43265
dc.publisherSPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
dc.source.beginpageArt. 034001
dc.source.endpageN/A
dc.source.issue3
dc.source.journalJOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3
dc.source.numberofpages8
dc.source.volume22
dc.title

Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence

dc.typeJournal article
dspace.entity.typePublication
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