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Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 $lA)
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Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 $lA)
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Date
2016
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33046.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Belmonte, Attilio
;
Fantini, Andrea
;
Redolfi, Augusto
;
Houssa, Michel
;
Jurczak, Gosia
;
Goux, Ludovic
Journal
Solid-State Electronics
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1763
since deposited on 2021-10-23
Acq. date: 2025-12-15
Citations
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Views
1763
since deposited on 2021-10-23
Acq. date: 2025-12-15
Citations