Publication:

Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 $lA)

Date

2016
Journal article
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dc.contributor.authorBelmonte, Attilio
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorHoussa, Michel
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGoux, Ludovic
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-23T10:06:44Z
dc.date.available2021-10-23T10:06:44Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26333
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S003811011630096X
dc.source.beginpage189
dc.source.endpage197
dc.source.journalSolid-State Electronics
dc.source.volume125
dc.title

Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 $lA)

dc.typeJournal article
dspace.entity.typePublication
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