Publication:

3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters

Date

2020
Proceedings Paper
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dc.contributor.authorVandooren, Anne
dc.contributor.authorWu, Zhicheng
dc.contributor.authorParihar, Narendra
dc.contributor.authorFranco, Jacopo
dc.contributor.authorParvais, Bertrand
dc.contributor.authorMatagne, Philippe
dc.contributor.authorDebruyn, Haroen
dc.contributor.authorMannaert, Geert
dc.contributor.authorDevriendt, Katia
dc.contributor.authorTeugels, Lieve
dc.contributor.authorVecchio, Emma
dc.contributor.authorRadisic, Dunja
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorChan, BT
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMitard, Jerome
dc.contributor.authorBesnard, G.
dc.contributor.authorAlvarez, A.
dc.contributor.authorGaudin, G.
dc.contributor.imecauthorVandooren, A.
dc.contributor.imecauthorWu, Z.
dc.contributor.imecauthorParihar, N.
dc.contributor.imecauthorFranco, J.
dc.contributor.imecauthorMatagne, P.
dc.contributor.imecauthorDebruyn, H.
dc.contributor.imecauthorMannaert, G.
dc.contributor.imecauthorDevriendt, K.
dc.contributor.imecauthorTeugels, L.
dc.contributor.imecauthorVecchio, E.
dc.contributor.imecauthorRadisic, D.
dc.contributor.imecauthorRosseel, E.
dc.contributor.imecauthorHikavyy, A.
dc.contributor.imecauthorChan, B. T.
dc.contributor.imecauthorWaldron, N.
dc.contributor.imecauthorMitard, J.
dc.contributor.imecauthorHuet, K.
dc.contributor.imecauthorDemuynck, S.
dc.contributor.imecauthorBoemmels, J.
dc.contributor.imecauthorCollaert, N.
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-12-08T08:43:52Z
dc.date.available2021-11-02T15:59:26Z
dc.date.available2021-12-08T08:43:52Z
dc.date.issued2020
dc.identifier.eisbn978-1-7281-6460-1
dc.identifier.issn0743-1562
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37753
dc.publisherIEEE
dc.source.conferenceIEEE Symposium on VLSI Technology and Circuits
dc.source.conferencedateJUN 15-19, 2020
dc.source.conferencelocationHonolulu, HI, USA
dc.source.journalna
dc.source.numberofpages2
dc.title

3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters

dc.typeProceedings paper
dspace.entity.typePublication
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