Area-selective atomic layer deposition of TiN, TiO2, and HfO2 on silicon ntride with inhibition on amorphous carbon

dc.contributor.author	Stevens, Eric
dc.contributor.author	Tomczak, Yoann
dc.contributor.author	Chan, BT
dc.contributor.author	Altamirano Sanchez, Efrain
dc.contributor.author	Parsons, Gregory
dc.contributor.author	Delabie, Annelies
dc.contributor.imecauthor	Tomczak, Yoann
dc.contributor.imecauthor	Chan, BT
dc.contributor.imecauthor	Altamirano Sanchez, Efrain
dc.contributor.imecauthor	Delabie, Annelies
dc.contributor.orcidimec	Chan, BT::0000-0003-2890-0388
dc.date.accessioned	2021-10-26T04:41:28Z
dc.date.available	2021-10-26T04:41:28Z
dc.date.issued	2018
dc.identifier.issn	0897-4756
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/31856
dc.identifier.url	https://pubs.acs.org/doi/10.1021/acs.chemmater.8b00017
dc.source.beginpage	3223
dc.source.endpage	3232
dc.source.issue	10
dc.source.journal	Chemistry of Materials
dc.source.volume	30
dc.title	Area-selective atomic layer deposition of TiN, TiO2, and HfO2 on silicon ntride with inhibition on amorphous carbon
dc.type	Journal article
dspace.entity.type	Publication
Files
Publication available in collections:	Articles

Date