Publication:

Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates

Date

2011
Journal article
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dc.contributor.authorLamagna, Luca
dc.contributor.authorFusi, Matteo
dc.contributor.authorSpiga, Sabina
dc.contributor.authorFanciulli, Marco
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMerckling, Clement
dc.contributor.authorMeuris, Marc
dc.contributor.authorMolle, Alessandro
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-19T15:11:16Z
dc.date.available2021-10-19T15:11:16Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19239
dc.source.beginpage431
dc.source.endpage434
dc.source.issue4
dc.source.journalMicroelectronic Engineering
dc.source.volume88
dc.title

Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates

dc.typeJournal article
dspace.entity.typePublication
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