Publication:
Analysis of tunneling currents and reliability of NMOSFET's with sub-2 nm gate oxides
Date
| dc.contributor.author | Yang, N. | |
| dc.contributor.author | Henson, W. K. | |
| dc.contributor.author | Wortman, J. J. | |
| dc.date.accessioned | 2021-10-14T11:59:22Z | |
| dc.date.available | 2021-10-14T11:59:22Z | |
| dc.date.issued | 1999 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4042 | |
| dc.source.beginpage | 453 | |
| dc.source.conference | International Electron Devices Meeting. Technical digest; December 1999; Washington, D.C. | |
| dc.source.conferencelocation | ||
| dc.source.endpage | 456 | |
| dc.title | Analysis of tunneling currents and reliability of NMOSFET's with sub-2 nm gate oxides | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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