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Articles
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Publication:
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Date
2022
Journal article
https://doi.org/10.1109/TNS.2022.3144204
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rony, M. W.
;
Zhang, En Xia
;
Toguchi, Shintaro
;
Luo, Xuyi
;
Reaz, Mahmud
;
Li, Kan
;
Linten, Dimitri
;
Mitard, Jerome
;
Reed, Robert A.
;
Fleetwood, Daniel M.
;
Schrimpf, Ronald D.
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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1811
since deposited on 2022-03-30
Acq. date: 2025-10-23
Citations
Metrics
Views
1811
since deposited on 2022-03-30
Acq. date: 2025-10-23
Citations