Publication:

Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

Date

2022
Journal article
https://doi.org/10.1109/TNS.2022.3144204
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dc.contributor.authorRony, M. W.
dc.contributor.authorZhang, En Xia
dc.contributor.authorToguchi, Shintaro
dc.contributor.authorLuo, Xuyi
dc.contributor.authorReaz, Mahmud
dc.contributor.authorLi, Kan
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2022-04-26T08:00:37Z
dc.date.available2022-03-30T02:07:18Z
dc.date.available2022-04-01T09:27:24Z
dc.date.available2022-04-26T08:00:37Z
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by the Air Force Research Laboratory and in part by the Air Force Office of Scientific Research.
dc.identifier.doi10.1109/TNS.2022.3144204
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39553
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage299
dc.source.endpage306
dc.source.issue3
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages8
dc.source.volume69
dc.subject.keywordsINDUCED DRAIN LEAKAGE
dc.subject.keywords1/F NOISE
dc.subject.keywordsTEMPERATURE INSTABILITY
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsGATE
dc.subject.keywordsINTERFACE
dc.subject.keywordsDEGRADATION
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsRADIATION
dc.subject.keywordsSOI
dc.title

Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

dc.typeJournal article
dspace.entity.typePublication
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