Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
Junctionless versus inversion mode gate-all-around nanowire transistors from a low-frequency noise perspective
Publication:
Junctionless versus inversion mode gate-all-around nanowire transistors from a low-frequency noise perspective
Copy permalink
Date
2018
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
37033.pdf
1.23 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Veloso, Anabela
;
Matagne, Philippe
;
Collaert, Nadine
;
Claeys, Cor
Journal
IEEE Transactions on Electron Devices
Abstract
Description
Metrics
Views
1922
since deposited on 2021-10-26
1
last month
Acq. date: 2025-12-15
Citations
Metrics
Views
1922
since deposited on 2021-10-26
1
last month
Acq. date: 2025-12-15
Citations