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On the temperature and field dependence of trap-assisted tunneling current in Ge p+n junctions

Date

2009
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorDe Stefano, Francesca
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorClaeys, Cor
dc.contributor.authorCrupi, Felice
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDe Stefano, Francesca
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.date.accessioned2021-10-18T03:06:28Z
dc.date.available2021-10-18T03:06:28Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16229
dc.source.beginpage562
dc.source.endpage564
dc.source.issue5
dc.source.journalIEEE Electron Device Letters
dc.source.volume30
dc.title

On the temperature and field dependence of trap-assisted tunneling current in Ge p+n junctions

dc.typeJournal article
dspace.entity.typePublication
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